? semiconductor components industries, llc, 2010 september, 2010 -- rev. 1 1 publication order number: njt4030p/d njt4030p bipolar power transistors pnp silicon features ? collector --emitter sustaining voltage -- v ceo(sus) =40vdc(min)@i c =10madc ? high dc current gain -- h fe = 200 (min) @ i c =1.0adc = 100 (min) @ i c =3.0adc ? low collector --emitter saturation voltage -- v ce(sat) = 0.200 vdc (max) @ i c =1.0adc = 0.500 vdc (max) @ i c =3.0adc ? sot--223 surface mount packaging ? epoxy meets ul 94, v--0 @ 0.125 in ? esd ratings: human body model, 3b; > 8000 v machine model, c; > 400 v ? these devices are pb--free, halogen free/bfr free and are rohs compliant sot--223 case 318e style 1 marking diagram schematic c2,4 b1 e3 top view pinout c ce b 4 123 pnp transistor 3.0 amperes 40 volts, 2.0 watts see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information pin assignment http://onsemi.com 1 4030p g ayw a = assembly location y year w = work week 4030p = specific device code g = pb--free package
njt4030p http://onsemi.com 2 maximum ratings (t c =25 ? c unless otherwise noted) rating symbol value unit collector--emitter voltage v ceo 40 vdc collector--base voltage v cb 40 vdc emitter--base voltage v eb 6.0 vdc base current -- continuous i b 1.0 adc collector current -- continuous collector current -- peak i c 3.0 5.0 adc total power dissipation to t a l p d @t a =25 ? c mounted on 1? sq. (645 sq. mm) collector pad on fr--4 bd material to t a l p d @t a =25 ? c mounted on 0.012? sq. (7.6 sq. mm) collector pad on fr--4 bd material p d 2.0 0.80 w operating and storage junction temperature range t j ,t stg ?55to+150 ? c stresses exceeding maximum ratings may dam age the device. maximum ratings are stres s ratings only. functional operation above the recommended operating conditions is not impli ed. extended exposure to stresses above the re commended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit thermal resistance, junction--to--case -- junction--to--ambient on 1? sq. (645 sq. mm) collector pad on fr--4 bd material -- junction--to--ambient on 0.012? sq. (7.6 sq. mm) collector pad on fr--4 bd material r ja r ja 64 155 ? c/w maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds t l 260 ? c ordering information device package shipping ? njt4030pt1g sot--223 (pb--free) 1000 / tape & reel njt4030pt3g sot--223 (pb--free) 4000 / tape & reel ?for information on tape and reel specificat ions, including part orientation and tape si zes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
njt4030p http://onsemi.com 3 electrical characteristics (t c =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector--emitter sustaining voltage (i c =10madc,i b =0adc) v ceo(sus) 40 -- -- vdc emitter--base voltage (i e =50 m adc, i c =0adc) v ebo 6.0 -- -- vdc collector cutoff current (v cb =40vdc) i cbo -- -- 100 nadc emitter cutoff current (v be =6.0vdc) i ebo -- -- 100 nadc on characteristics (note 1) collector--emitter saturation voltage (i c =0.5adc,i b =5.0madc) (i c =1.0adc,i b =10madc) (i c =3.0adc,i b =0.3adc) v ce(sat) -- -- -- -- -- -- 0.150 0.200 0.500 vdc base--emitter saturation voltage (i c =1.0adc,i b =0.1adc) v be(sat) -- -- 1.0 vdc base--emitter on voltage (i c =1.0adc,v ce =2.0vdc) v be(on) -- -- 1.0 vdc dc current gain (i c =0.5adc,v ce =1.0vdc) (i c =1.0adc,v ce =1.0vdc) (i c =3.0adc,v ce =1.0vdc) h fe 220 200 100 -- -- -- -- 400 -- -- dynamic characteristics output capacitance (v cb = 10 vdc, f = 1.0 mhz) c ob -- 40 -- pf input capacitance (v eb =5.0vdc,f=1.0mhz) c ib -- 130 -- pf current--gain -- bandwidth product (note 2) (i c = 500 ma, v ce =10v,f test =1.0mhz) f t -- 160 -- mhz 1. pulse test: pulse width ? 300 m s, duty cycle ? 2%. 2. f t =|h fe | ? f test
njt4030p http://onsemi.com 4 figure 1. power derating t j , temperature ( ? c) 150 100 75 50 25 0 0.5 1.0 1.5 2.0 2.5 p d , power dissipation (w) t c 125 t a
njt4030p http://onsemi.com 5 typical characteristics figure 2. dc current gain figure 3. dc current gain i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 10 1 0.1 0.01 0.001 0 100 200 300 500 600 700 figure 4. collector--emitter saturation voltage figure 5. collector--emitter saturation voltage i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0.001 0.01 0.1 1 10 1 0.1 0.01 0.001 0.01 0.1 1 figure 6. collector saturation region figure 7. v be(on) voltage i b , base current (a) i c , collector current (a) 1.0e--03 1.0e--04 0.01 0.1 1 10 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 1.2 h fe , dc current gain h fe , dc current gain v ce(sat) , collector--emitter saturation voltage (v) v ce(sat) , collector--emitter saturation voltage (v) v ce(sat) , collector--emitter saturation voltage (v) v be(on) , emitter--base voltage (v) v ce =1v 150 ? c -- 4 0 ? c 25 ? c v ce =4v 150 ? c -- 4 0 ? c 25 ? c 400 i c /i b =10 150 ? c -- 4 0 ? c 25 ? c i c /i b =50 150 ? c -- 4 0 ? c 25 ? c 1.0e--02 1.0e--01 1.0e+00 0.7 0.8 0.9 1.0 1.1 v ce =2v 150 ? c -- 4 0 ? c 25 ? c i c =2a 0.1 a 1a 0.5 a
njt4030p http://onsemi.com 6 typical characteristics figure 8. base--emitter saturation voltage figure 9. base--emitter saturation voltage i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.7 0.9 1.1 1.3 figure 10. input capacitance figure 11. output capacitance v eb , emitter base voltage (v) v cb , collector base voltage (v) 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 35 30 25 20 15 10 5 0 0 20 40 60 80 100 figure 12. current--gain bandwidth product figure 13. safe operating area i c , collector current (a) v ce , collector--emitter voltage (v) 1 0.1 0.01 0.001 0 20 40 60 120 140 180 200 100 10 1 0.01 0.1 1 10 v be(sat) , emitter--base saturation voltage (v) c ibo , input capacitance (pf) c obo , output capacitance (pf) f ta u , current bandwidth product (mhz) i c , collector current (a) 0.4 0.5 0.6 0.8 1.0 1.2 i c /i b =10 150 ? c -- 4 0 ? c 25 ? c i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.1 0.2 0.3 0.7 0.9 1.1 v be(sat) , emitter--base saturation voltage (v) 0.4 0.5 0.6 0.8 1.0 1.2 i c /i b =50 150 ? c -- 4 0 ? c 25 ? c t j =25 ? c f test =1mhz t j =25 ? c f test =1mhz 80 100 160 t j =25 ? c f test =1mhz v ce =10v 0.5 ms 10 ms 100 ms 1ms
njt4030p http://onsemi.com 7 package dimensions sot--223 (to--261) case 318e--04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 ? mm inches ? scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e -- -- e1 0 ? 1 0 ? 0 ? 1 0 ? l l 0 . 2 0 -- -- -- -- -- -- 0 . 0 0 8 -- -- -- -- -- -- style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb--free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further noti ce to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation speci al, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performa nce may vary over time. all operating parameters, including ?typicals? must be validated for each custo mer application by customer?s techni cal experts. scillc does not conve y any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or fo r any other application in which the failure of the scillc product could create a situation wher e personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unaut horized application, buyer shall indemnify and hold scillc and its offic ers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or in directly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such clai m alleges that scillc was negligent regarding the design or manufactur e of the part. scillc is an equal opportunity/affirmative action employer. this literature is subj ect to all applicable c opyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800--282--9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81--3--5773--3850 njt4030p/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303--675--2175 or 800--344--3860 toll free usa/canada fax : 303--675--2176 or 800--344--3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
|
